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Model RZM002P02T2L

Description P 沟道 150 mW 20 V 1.2 Ohm 1.2V 驱动 P 沟道 Mosfet 表面贴装 - VMT-3

Brand: ROHM Semiconductor

Packaging SOT-723-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.8 Ω
Technical parameters/dissipated power:	150 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/rise time:	4 ns
Technical parameters/Input capacitance (Ciss):	115pF @10V(Vds)
Technical parameters/rated power (Max):	150 mW
Technical parameters/descent time:	17 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	150 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-723-3
Dimensions/Length:	1.3 mm
Dimensions/Width:	0.9 mm
Dimensions/Height:	0.45 mm
Dimensions/Packaging:	SOT-723-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	RTM002P02T2L	ROHM Semiconductor	类似代替	SOT-723-3	ROHM RTM002P02T2L 晶体管, MOSFET, P沟道, -200 mA, -20 V, 1 ohm, -4.5 V, -700 mV	PDF
	RZM002P02	ROHM Semiconductor	功能相似	SOT-723	RZM002P02 P沟道MOS场效应管 -20V 250mA 0.8ohm SOT-723 marking/标记 YK 高速开关 1.2V超低电压驱动	PDF