Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -200 mA
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 150 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 50pF @10V(Vds)
Technical parameters/rated power (Max): 150 mW
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-723-3
External dimensions/width: 0.8 mm
External dimensions/packaging: SOT-723-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RZM002P02
|
ROHM Semiconductor | 功能相似 | SOT-723 |
RZM002P02 P沟道MOS场效应管 -20V 250mA 0.8ohm SOT-723 marking/标记 YK 高速开关 1.2V超低电压驱动
|
||
RZM002P02T2L
|
ROHM Semiconductor | 类似代替 | SOT-723-3 |
P 沟道 150 mW 20 V 1.2 Ohm 1.2V 驱动 P 沟道 Mosfet 表面贴装 - VMT-3
|
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