Technical parameters/number of pins: 2
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.8 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Vishay Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5235B
|
Central Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
Diodes | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Multicomp | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
New Jersey Semiconductor | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5235B-TR
|
LiteOn | 功能相似 | DO-35 |
VISHAY 1N5235B-TR 齐纳二极管, 500mW, 6.8V, DO-35
|
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1N5235B-TR
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
VISHAY 1N5235B-TR 齐纳二极管, 500mW, 6.8V, DO-35
|
||
|
|
VISHAY | 类似代替 | 2 |
500mW，1N52 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
||
1N5235BTR
|
Fairchild | 类似代替 | DO-35-2 |
500mW，1N52 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
||
NTE5014A
|
NTE Electronics | 功能相似 | DO-35 |
DO-35 6.8V 0.5W(1/2W)
|
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