Technical parameters/breakdown voltage: 1.10 V
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.8 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/HTS code: 85411000506
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 类似代替 | DO-35 |
Zener Diodes
|
||
1N5235B
|
Central Semiconductor | 类似代替 | DO-35 |
Zener Diodes
|
||
1N5235B
|
Diodes | 类似代替 | DO-35 |
Zener Diodes
|
||
1N5235B
|
先科ST | 类似代替 | DO-35 |
Zener Diodes
|
||
1N5235B
|
Multicomp | 类似代替 | DO-35 |
Zener Diodes
|
||
1N5235B
|
New Jersey Semiconductor | 类似代替 |
Zener Diodes
|
|||
MMSZ5235BT1G
|
ON Semiconductor | 功能相似 | SOD-123 |
500mW,MMSZ52xxxT1G / SZMMSZ52xxxT1G 系列,ON Semiconductor 表面安装外壳,SOD-123 ### Zener Diodes, ON Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review