Technical parameters/voltage regulation value: | 6.8 V |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Packaging: | DO-35 |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Central Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
Diodes | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
先科ST | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Multicomp | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
New Jersey Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
|
VISHAY | 功能相似 | 2 |
500mW，1N52 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
||
1N5235BTR
|
Fairchild | 功能相似 | DO-35-2 |
500mW，1N52 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
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