Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 49 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFD12N06RLESM9A
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR RFD12N06RLESM9A 晶体管, MOSFET, N沟道, 17 A, 60 V, 0.052 ohm, 10 V, 3 V 新
|
||
RFD12N06RLESM9A
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR RFD12N06RLESM9A 晶体管, MOSFET, N沟道, 17 A, 60 V, 0.052 ohm, 10 V, 3 V 新
|
||
SUD45N05-20L-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET N-CH 50V 30A 3Pin DPAK
|
||
SUD45N05-20L-E3
|
VISHAY | 功能相似 | DPAK |
Trans MOSFET N-CH 50V 30A 3Pin DPAK
|
||
SUD45N05-20L-E3
|
Vishay Intertechnology | 功能相似 | TO-252 |
Trans MOSFET N-CH 50V 30A 3Pin DPAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review