Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 17.0 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.052 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 49 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±16.0 V |
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Technical parameters/Continuous drain current (Ids): | 17.0 mA |
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Technical parameters/Input capacitance (Ciss): | 485pF @25V(Vds) |
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Technical parameters/rated power (Max): | 49 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 49W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFD12N06RLESM
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Fairchild | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR RFD12N06RLESM 晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V
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