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Model RFD12N06RLESM9A
Description ON Semiconductor UltraFET 系列 Si N沟道 MOSFET RFD12N06RLESM9A, 18 A, Vds=60 V, 3引脚 DPAK (TO-252)封装
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.3  yuan 3.3yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3776) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.052 Ω

 

Technical parameters/dissipated power:

49 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Input capacitance (Ciss):

485pF @25V(Vds)

 

Technical parameters/rated power (Max):

49 W

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

49 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, power management

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RFD12N06RLESM RFD12N06RLESM Fairchild 功能相似 TO-252
FAIRCHILD SEMICONDUCTOR RFD12N06RLESM 晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V
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