Technical parameters/frequency: 300 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 35
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP2222ATA
|
Samsung | 完全替代 |
FAIRCHILD SEMICONDUCTOR KSP2222ATA 单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 35 hFE
|
|||
KSP2222ATF
|
Fairchild | 类似代替 | TO-226-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
P2N2222A
|
ON Semiconductor | 类似代替 | TO-226-3 |
放大器晶体管（ NPN硅） Amplifier Transistors(NPN Silicon)
|
||
P2N2222AZL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
TO-92 NPN 40V 0.6A
|
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