Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 600 mA |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 0.6A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP2222ABU
|
Fairchild | 类似代替 | TO-92-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSP2222ABU
|
ON Semiconductor | 类似代替 | TO-226-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSP2222ATA
|
Samsung | 类似代替 |
FAIRCHILD SEMICONDUCTOR KSP2222ATA 单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 35 hFE
|
|||
P2N2222AG
|
ON Semiconductor | 完全替代 | TO-92-3 |
ON SEMICONDUCTOR P2N2222AG. 放大器晶体管
|
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