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Model FM22L16-55-TG
Description F-RAM, Ramtron Non volatile ferroelectric RAM memory has fast write speed, high tolerance, and low power consumption. FRAM (ferroelectric RAM) is a non-volatile memory that uses ferroelectric films as capacitors to store data. F-RAM has the characteristics of both ROM and RAM devices, with high tolerance for high-speed access and write mode, low power consumption, non volatility, and excellent tamper resistance. Therefore, this memory is particularly suitable for smart cards that require high security and low consumption, as well as mobile phones and other devices.
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Brand: Cypress Semiconductor
Packaging TSOP-44
Delivery time
Packaging method Tray
Standard packaging quantity 1
51.36  yuan 51.36yuan
1+:
$ 59.0629
10+:
$ 56.4949
100+:
$ 56.0327
250+:
$ 55.6732
500+:
$ 55.1082
1000+:
$ 54.8514
2500+:
$ 54.4919
5000+:
$ 54.1837
Quantity
1+
10+
100+
250+
500+
Price
$59.0629
$56.4949
$56.0327
$55.6732
$55.1082
Price $ 59.0629 $ 56.4949 $ 56.0327 $ 55.6732 $ 55.1082
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7937) Minimum order quantity(1)
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Technical parameters/working voltage: 2.7V ~ 3.6V

Technical parameters/power supply current: 18 mA

Technical parameters/number of pins: 44

Technical parameters/clock frequency: 40 MHz

Technical parameters/access time: 55 ns

Technical parameters/access time (Max): 55 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/power supply voltage: 2.7V ~ 3.6V

Technical parameters/power supply voltage (Max): 3.6 V

Technical parameters/power supply voltage (Min): 2.7 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 44

Encapsulation parameters/Encapsulation: TSOP-44

External dimensions/length: 18.41 mm

External dimensions/width: 10.16 mm

External dimensions/height: 1.05 mm

External dimensions/packaging: TSOP-44

Physical parameters/operating temperature: -40℃ ~ 85℃

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tray

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7500
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7500N
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7504N
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7500
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7500N
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7504N
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7500
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7500N
适配器型号: GX1046 GX1010 ZX1046 ZX1010 支持的编程器: SUPERPRO/7504N

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FM21L16-60-TG FM21L16-60-TG Cypress Semiconductor 功能相似 TSOP-44
F-RAM, Ramtron 非易失性铁电 RAM 存储器 快写入速度 高耐受性 低功耗 ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
FM22L16-55-TGTR FM22L16-55-TGTR Cypress Semiconductor 类似代替 TSOP-44
FM22L16 Series 4Mb (256K x 16) 3V 55ns Parallel F-RAM Memory - TSOP-44
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