Technical parameters/number of pins: 2
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 W
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Signal Processing, Audio, Audio, Signal Processing
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4920
|
Central Semiconductor | 功能相似 | TO-126 |
Trans GP BJT PNP 80V 3A 3Pin TO-225 Bulk
|
||
2N4920
|
Micro Commercial Components | 功能相似 | SIP |
Trans GP BJT PNP 80V 3A 3Pin TO-225 Bulk
|
||
2N4920
|
Motorola | 功能相似 |
Trans GP BJT PNP 80V 3A 3Pin TO-225 Bulk
|
|||
|
|
ROHM Semiconductor | 功能相似 | SOP |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
|
|
Inchange Semiconductor | 功能相似 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
|||
BU406
|
Fairchild | 功能相似 | TO-220-3 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
BU406
|
Bourns J.W. Miller | 功能相似 | TO-220 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
BU406
|
ON Semiconductor | 功能相似 | TO-220-3 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
PMD16K100
|
Solid State | 功能相似 | TO-3 |
SOLID STATE PMD16K100 单晶体管 双极, NPN, 100 V, 200 W, 20 A, 1000 hFE
|
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