Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 W
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5303
|
Multicomp | 功能相似 | TO-3 |
MULTICOMP 2N5303 单晶体管 双极, NPN, 80 V, 2 MHz, 200 W, 20 A, 40 hFE
|
||
|
|
ETC | 功能相似 |
MULTICOMP 2N5303 单晶体管 双极, NPN, 80 V, 2 MHz, 200 W, 20 A, 40 hFE
|
|||
2N5303
|
NTE Electronics | 功能相似 |
MULTICOMP 2N5303 单晶体管 双极, NPN, 80 V, 2 MHz, 200 W, 20 A, 40 hFE
|
|||
2N5303
|
Central Semiconductor | 功能相似 | TO-3 |
MULTICOMP 2N5303 单晶体管 双极, NPN, 80 V, 2 MHz, 200 W, 20 A, 40 hFE
|
||
2N5303
|
Microsemi | 功能相似 | TO-3 |
MULTICOMP 2N5303 单晶体管 双极, NPN, 80 V, 2 MHz, 200 W, 20 A, 40 hFE
|
||
|
|
Inchange Semiconductor | 功能相似 |
MULTICOMP MJ11016 单晶体管 双极, 达林顿, NPN, 120 V, 200 W, 30 A, 1000 hFE
|
|||
MJ11016
|
Multicomp | 功能相似 | TO-3 |
MULTICOMP MJ11016 单晶体管 双极, 达林顿, NPN, 120 V, 200 W, 30 A, 1000 hFE
|
||
MJ11016
|
Mospec | 功能相似 |
MULTICOMP MJ11016 单晶体管 双极, 达林顿, NPN, 120 V, 200 W, 30 A, 1000 hFE
|
|||
MJ11016
|
Central Semiconductor | 功能相似 | TO-204 |
MULTICOMP MJ11016 单晶体管 双极, 达林顿, NPN, 120 V, 200 W, 30 A, 1000 hFE
|
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