Technical parameters/frequency: 10 MHz
Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 7.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 60 W
Technical parameters/gain bandwidth product: 6 MHz
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 7A
Technical parameters/minimum current amplification factor (hFE): 10
Technical parameters/rated power (Max): 60 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 60000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.28 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
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功率 NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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Multicomp | 类似代替 | TO-220 |
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Wings | 类似代替 |
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