Technical parameters/capacitors: 10 µF
Technical parameters/tolerances: ±20 %
Technical parameters/rated voltage: 20 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: Radial
External dimensions/packaging: Radial
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D106X0010BXV1E3
|
Vishay Semiconductor | 完全替代 |
Cap Tant Solid 10uF 10V 20% (5 X 7.62mm) Radial 2.54mm 125℃ Bulk
|
|||
199D106X0016C2A1E3
|
Vishay Sprague | 完全替代 | Through Hole |
钽质电容器-固体铅 199D106X0016C2A1E3
|
||
199D106X0016C2A1E3
|
Vishay Semiconductor | 完全替代 |
钽质电容器-固体铅 199D106X0016C2A1E3
|
|||
199D106X0020C1V1E3
|
Vishay Sprague | 完全替代 | Radial |
199D 系列 10 uF ±20 % 20 V 径向 固体电解质钽电容
|
||
|
|
VISHAY | 完全替代 | Radial |
199D 系列 10 uF ±20 % 20 V 径向 固体电解质钽电容
|
||
199D106X0020C1V1E3
|
Vishay Semiconductor | 完全替代 | Radial |
199D 系列 10 uF ±20 % 20 V 径向 固体电解质钽电容
|
||
199D106X0020C2A1E3
|
Vishay Semiconductor | 类似代替 | Radial |
CAP TANT 10uF 20V 20% RADIAL
|
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