Technical parameters/capacitance: | 10.0 µF |
|
Technical parameters/tolerances: | ±20 % |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | Radial |
|
Dimensions/Packaging: | Radial |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D106X0010BXV1E3
|
Vishay Semiconductor | 完全替代 |
Cap Tant Solid 10uF 10V 20% (5 X 7.62mm) Radial 2.54mm 125℃ Bulk
|
|||
199D106X0016C2A1E3
|
Vishay Sprague | 完全替代 | Through Hole |
钽质电容器-固体铅 199D106X0016C2A1E3
|
||
199D106X0016C2A1E3
|
Vishay Semiconductor | 完全替代 |
钽质电容器-固体铅 199D106X0016C2A1E3
|
|||
199D106X0020C1V1E3
|
Vishay Sprague | 完全替代 | Radial |
199D 系列 10 uF ±20 % 20 V 径向 固体电解质钽电容
|
||
|
|
VISHAY | 完全替代 | Radial |
199D 系列 10 uF ±20 % 20 V 径向 固体电解质钽电容
|
||
199D106X0020C1V1E3
|
Vishay Semiconductor | 完全替代 | Radial |
199D 系列 10 uF ±20 % 20 V 径向 固体电解质钽电容
|
||
199D106X0020C2A1E3
|
Vishay Semiconductor | 类似代替 | Radial |
CAP TANT 10uF 20V 20% RADIAL
|
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