Technical parameters/capacitance: | 10.0 µF |
|
Technical parameters/tolerances: | ±20 % |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/rated voltage: | 16 V |
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Encapsulation parameters/installation method: | Through Hole |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D106X0016C1V1E3
|
Vishay Semiconductor | 完全替代 |
VISHAY 199D106X0016C1V1E3 钽电容, 10uF, 16V, 径向引线
|
|||
199D106X0020C1V1E3
|
Vishay Sprague | 完全替代 | Radial |
CAP TANT 10uF 20V 20% RADIAL
|
||
|
|
VISHAY | 完全替代 | Radial |
CAP TANT 10uF 20V 20% RADIAL
|
||
199D106X0020C1V1E3
|
Vishay Semiconductor | 完全替代 | Radial |
CAP TANT 10uF 20V 20% RADIAL
|
||
199D106X0020C2A1E3
|
Vishay Semiconductor | 完全替代 | Radial |
Cap Tant Solid 10uF 20V 20% (5.5 X 9.14mm) Radial 2.54mm 125℃ Ammo Pack
|
||
199D106X0025C1V1E3
|
Vishay Semiconductor | 完全替代 |
10uF THT Solid MnO2 Tantalum Electrolytic Capacitor, 25V dc +/-20%, 199D Series
|
|||
199D106X0025C1V1E3
|
VISHAY | 完全替代 | Radial |
10uF THT Solid MnO2 Tantalum Electrolytic Capacitor, 25V dc +/-20%, 199D Series
|
||
199D106X9016C1V1E3
|
Vishay Sprague | 功能相似 | C |
VISHAY 199D106X9016C1V1E3 钽电容, 10uF, 16V, 径向引线
|
||
199D106X9025C1V1E3
|
Vishay Semiconductor | 功能相似 |
VISHAY 199D106X9025C1V1E3 钽电容, 10uF, 25V, 径向引线
|
|||
199D106X9025C1V1E3
|
Vishay Intertechnology | 功能相似 |
VISHAY 199D106X9025C1V1E3 钽电容, 10uF, 25V, 径向引线
|
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