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Model IRFR2405PBF
Description N Channel power MOSFETs 50A to 59A, Infineon's discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
7.72  yuan 7.72yuan
10+:
$ 9.2604
100+:
$ 8.7974
500+:
$ 8.4887
1000+:
$ 8.4733
2000+:
$ 8.4115
5000+:
$ 8.3344
7500+:
$ 8.2726
10000+:
$ 8.2418
Quantity
10+
100+
500+
1000+
2000+
Price
$9.2604
$8.7974
$8.4887
$8.4733
$8.4115
Price $ 9.2604 $ 8.7974 $ 8.4887 $ 8.4733 $ 8.4115
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9645) Minimum order quantity(10)
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Technical parameters/rated power: 110 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.016 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 110 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 56A

Technical parameters/rise time: 130 ns

Technical parameters/Input capacitance (Ciss): 2430pF @25V(Vds)

Technical parameters/descent time: 78 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 110W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Power Management

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFR1018EPBF IRFR1018EPBF Infineon 类似代替 TO-252-3
INFINEON IRFR1018EPBF 晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V
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