Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 56.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/product series: IRFR2405
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 56.0 A
Technical parameters/rise time: 130 ns
Technical parameters/Input capacitance (Ciss): 2430pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR2405PBF
|
Infineon | 完全替代 | TO-252-3 |
N 通道功率 MOSFET 50A 至 59A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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