Chip AI consultant
Technical parameters/rated power: | 110 W |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.016 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 110 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/Input capacitance: | 2430 pF |
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Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Continuous drain current (Ids): | 56A |
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Technical parameters/rise time: | 130 ns |
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Technical parameters/Input capacitance (Ciss): | 2430pF @25V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Technical parameters/descent time: | 78 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 110W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.5 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.3 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR2405PBF
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Infineon | 完全替代 | TO-252-3 |
N 通道功率 MOSFET 50A 至 59A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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