Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/working voltage: 10V ~ 20V
Technical parameters/rated power: 1.25 W
Technical parameters/rise/fall time: 80ns, 40ns
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: 600 V
Technical parameters/output current: 250 mA
Technical parameters/number of channels: 2
Technical parameters/number of pins: 16
Technical parameters/dissipated power: 1250 mW
Technical parameters/rise time: 130ns (Max)
Technical parameters/descent time: 65ns (Max)
Technical parameters/descent time (Max): 65 ns
Technical parameters/rise time (Max): 130 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 10.5 mm
External dimensions/width: 7.6 mm
External dimensions/height: 2.35 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management, Consumer Electronics, Industrial, Power Management, Consumer Electronics, Alternative Energy, Alternative Energy
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2112S
|
IRF | 功能相似 |
600V High and Low Side Driver IC with typical 0.25A source and 0.5A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP.
|
|||
IR2112STRPBF
|
International Rectifier | 完全替代 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IR2112STRPBF
|
Infineon | 完全替代 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IR2112STRPBF
|
IFC | 完全替代 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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