Technical parameters/power supply voltage (DC): | 20.0V (max) |
|
Technical parameters/operating voltage: | 10V ~ 20V |
|
Technical parameters/number of output interfaces: | 2 |
|
Technical parameters/dissipated power: | 1250 mW |
|
Technical parameters/rise time: | 130ns (Max) |
|
Technical parameters/descent time: | 65ns (Max) |
|
Technical parameters/descent time (Max): | 65 ns |
|
Technical parameters/rise time (Max): | 130 ns |
|
Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 1250 mW |
|
Technical parameters/power supply voltage: | 10V ~ 20V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 16 |
|
Encapsulation parameters/Encapsulation: | SOIC-16 |
|
Dimensions/Length: | 10.5 mm |
|
Dimensions/Height: | 2.35 mm |
|
Dimensions/Packaging: | SOIC-16 |
|
Physical parameters/operating temperature: | -40℃ ~ 125℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2112S
|
IRF | 功能相似 |
600V High and Low Side Driver IC with typical 0.25A source and 0.5A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP.
|
|||
IR2112SPBF
|
Infineon | 完全替代 | SOIC-16 |
INFINEON IR2112SPBF 双路驱动器芯片, 高压侧和低压侧, 10V-20V电源, 420mA输出, 105ns延迟, SOIC-16
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review