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Model IR2112STRPBF
Description P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
Product QR code
Brand: Infineon
Packaging SOIC-16
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.7  yuan 10.7yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5897) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC):

10.0V (min)

 

Technical parameters/rated power:

1.25 W

 

Technical parameters/rise/fall time:

80ns, 40ns

 

Technical parameters/number of output interfaces:

2

 

Technical parameters/output voltage:

600 V

 

Technical parameters/output current:

200 mA

 

Technical parameters/number of channels:

2

 

Technical parameters/number of pins:

16

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/Static current:

180 µA

 

Technical parameters/rise time:

130 ns

 

Technical parameters/descent time:

65 ns

 

Technical parameters/descent time (Max):

65 ns

 

Technical parameters/rise time (Max):

130 ns

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/dissipated power (Max):

1250 mW

 

Technical parameters/power supply voltage:

10V ~ 20V

 

Technical parameters/power supply voltage (Max):

20 V

 

Technical parameters/power supply voltage (Min):

10 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

16

 

Encapsulation parameters/Encapsulation:

SOIC-16

 

Dimensions/Length:

10.5 mm

 

Dimensions/Width:

7.6 mm

 

Dimensions/Height:

2.65 mm

 

Dimensions/Packaging:

SOIC-16

 

Physical parameters/operating temperature:

-40℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IR2112S IR2112S IRF 功能相似
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INFINEON IR2112SPBF 双路驱动器芯片, 高压侧和低压侧, 10V-20V电源, 420mA输出, 105ns延迟, SOIC-16
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