Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 9.00 A
Technical parameters/drain source resistance: 15.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±18.0 V
Technical parameters/Continuous drain current (Ids): 9.00 A
Technical parameters/rise time: 80.0 ns
Technical parameters/Input capacitance (Ciss): 730pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS10N3LH5
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V ， 0.019 I© ， 10 A ， SO - 8 STripFETâ ?? ¢ V功率MOSFET N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET
|
||
STS5N15F3
|
ST Microelectronics | 类似代替 | SOIC-8 |
SO N-CH 150V 5A
|
||
STS9NH3LL
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V - 0.018 Ω - 9 A - SO- 8低栅极电荷的STripFET ™III功率MOSFET N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET
|
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