Technical parameters/drain source resistance: 28.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 33.0 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFD3055SM
|
Harris | 功能相似 |
12A , 60V , 0.150 Ohm的N通道功率MOSFET 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
|
|||
RFD3055SM
|
Fairchild | 功能相似 | TO-252-3 |
12A , 60V , 0.150 Ohm的N通道功率MOSFET 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
|
||
SUB40N06-25L
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET 60V 40A 3.7W
|
||
SUD40N10-25-E3
|
Vishay Intertechnology | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 100V 40A 3Pin(2+Tab) DPAK
|
||
SUD40N10-25-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 100V 40A 3Pin(2+Tab) DPAK
|
||
SUD40N10-25-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
Trans MOSFET N-CH 100V 40A 3Pin(2+Tab) DPAK
|
||
SUD40N10-25-E3
|
VISHAY | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 100V 40A 3Pin(2+Tab) DPAK
|
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