Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/dissipated power: 136 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Ta), 136W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN025-100D,118
|
Nexperia | 功能相似 | TO-252-3 |
NXP PSMN025-100D,118 晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
|
||
STD40NF10
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD40NF10 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
|
||
SUD40N10-25
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET 100V 40A 33W
|
||
SUD40N10-25
|
Vishay Intertechnology | 类似代替 |
MOSFET 100V 40A 33W
|
|||
SUD40N10-25
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET 100V 40A 33W
|
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