Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN025-100D,118
|
Nexperia | 功能相似 | TO-252-3 |
NXP PSMN025-100D,118 晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
|
||
STD40NF10
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD40NF10 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
|
||
SUD40N10-25
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET 100V 40A 33W
|
||
SUD40N10-25
|
Vishay Intertechnology | 类似代替 |
MOSFET 100V 40A 33W
|
|||
SUD40N10-25
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET 100V 40A 33W
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review