Technical parameters/rated power: 2.5 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0037 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 5.4 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 21A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 4090pF @15V(Vds)
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Computers & Computer Peripherals, Load Switch Low Side, Power Management, Load Switch High Side, Battery Protection, Computers and Computer Peripherals
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
IFA | 类似代替 |
INFINEON IRF7832PBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 4 mohm, 10 V, 2.32 V
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IRF7832TRPBF
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International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7832TRPBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
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IRF7832TRPBF
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Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7832TRPBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
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IRF7862TRPBF
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Infineon | 类似代替 | SOIC-8 |
N 沟道 30 V 2.5 W 30 nC Hexfet 功率 MOSFET 表面贴装 - SOIC-8
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