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Model IRF7832TRPBF
Description N沟道,30V,20A,4mΩ@10V
Product QR code
Brand: International Rectifier
Packaging SOIC-8
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
2.21  yuan 2.21yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3355) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

20.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/product series:

IRF7832

 

Technical parameters/threshold voltage:

2.32 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/Continuous drain current (Ids):

20.0 A

 

Technical parameters/rise time:

12.3 ns

 

Technical parameters/Input capacitance (Ciss):

4310pF @15V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Width:

3.9 mm

 

Dimensions/Packaging:

SOIC-8

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7832PBF IRF7832PBF IFA 类似代替
INFINEON IRF7832PBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 4 mohm, 10 V, 2.32 V
IRF7862PBF IRF7862PBF Infineon 类似代替 SOIC-8
INFINEON IRF7862PBF 晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
PDF
IRF7862TRPBF IRF7862TRPBF Infineon 类似代替 SOIC-8
N 沟道 30 V 2.5 W 30 nC Hexfet 功率 MOSFET 表面贴装 - SOIC-8

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