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Model IRF7862TRPBF
Description N 沟道 30 V 2.5 W 30 nC Hexfet 功率 MOSFET 表面贴装 - SOIC-8
Product QR code
Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.72  yuan 1.72yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5802) Minimum order quantity(1)
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Technical parameters/rated power:

2.5 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

4.5 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

2.35 V

 

Technical parameters/Input capacitance:

4090 pF

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/Continuous drain current (Ids):

21A

 

Technical parameters/rise time:

19 ns

 

Technical parameters/Input capacitance (Ciss):

4090pF @15V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/descent time:

11 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.5W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

4.9 mm

 

Dimensions/Width:

3.9 mm

 

Dimensions/Height:

1.75 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Computers and computer peripherals, Battery Protection, Load Switch Low Side, Power Ma

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7832PBF IRF7832PBF IFA 类似代替
INFINEON IRF7832PBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 4 mohm, 10 V, 2.32 V
IRF7832TRPBF IRF7832TRPBF International Rectifier 类似代替 SOIC-8
INFINEON IRF7832TRPBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
PDF
IRF7832TRPBF IRF7832TRPBF Infineon 类似代替 SOIC-8
INFINEON IRF7832TRPBF 晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
PDF
IRF7862PBF IRF7862PBF Infineon 类似代替 SOIC-8
INFINEON IRF7862PBF 晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
PDF

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