Technical parameters/frequency: 180 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 960 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/width: 3.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56-16,115
|
NXP | 类似代替 | TO-261-4 |
NXP BCP56-16,115 单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE
|
||
BCP56T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BCP56T1G 单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
|
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