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Model BCP56T1G
Description ON SEMICONDUCTOR BCP56T1G 单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
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Brand: ON Semiconductor
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.44  yuan 0.44yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3937) Minimum order quantity(1)
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Technical parameters/frequency:

130 MHz

 

Technical parameters/rated voltage (DC):

80.0 V

 

Technical parameters/rated current:

1.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

1.5 W

 

Technical parameters/breakdown voltage (collector emitter):

80 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

40 @150mA, 2V

 

Technical parameters/rated power (Max):

1.5 W

 

Technical parameters/DC current gain (hFE):

250

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

3.5 mm

 

Dimensions/Height:

1.57 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Audio, Industrial, Power Management, Automotive, Power Management, Automotive

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standar

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BCP56T3G BCP56T3G ON Semiconductor 类似代替 TO-261-4
ON SEMICONDUCTOR BCP56T3G Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE 新
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