Technical parameters/frequency: 180 MHz
Technical parameters/number of pins: 4
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 650 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 960 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 0.96 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Automotive, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56-16,135
|
Nexperia | 类似代替 | TO-261-4 |
SC-73 NPN 80V 1A
|
||
BCP56-16,135
|
NXP | 类似代替 | TO-261-4 |
SC-73 NPN 80V 1A
|
||
BCP56-16T
|
NXP | 完全替代 | SOT-223 |
NXP BCP56-16T Bipolar (BJT) Single Transistor, NPN, 80V, 180MHz, 650mW, 1A, 100 hFE New
|
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