Technical parameters/rated power: | 1.35 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 2V |
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Technical parameters/rated power (Max): | 960 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1350 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56-16,115
|
NXP | 类似代替 | TO-261-4 |
NXP BCP56-16,115 单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE
|
||
BCP56T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BCP56T1G 单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
|
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