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Model NP80N04NUG-S18-AY

Description MOSField Effect MOS Field Effect Transistor

Brand: Renesas Electronics

Packaging TO-262

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-262

External dimensions/packaging: TO-262

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
NP80N04MLG-S18-AY	Renesas Electronics	功能相似	TO-220	MOS场效应 MOS FIELD EFFECT TRANSISTOR	PDF
NP80N04MLG-S18-AY	NEC	功能相似		MOS场效应 MOS FIELD EFFECT TRANSISTOR
NP80N04PLG-E1B-AY	NEC	功能相似		MOS场效应 MOS FIELD EFFECT TRANSISTOR
NP80N04PLG-E1B-AY	Renesas Electronics	功能相似	TO-263-3	MOS场效应 MOS FIELD EFFECT TRANSISTOR	PDF
NP80N04PUG-E1B-AY	NEC	功能相似		MOS场效应 MOS FIELD EFFECT TRANSISTOR

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