logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   MOSpipe   NP80N04MLG-S18-AY
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model NP80N04MLG-S18-AY
Description MOSField Effect MOS Field Effect Transistor
Product QR code
Brand: Renesas Electronics
Packaging TO-220
Delivery time
Packaging method Tube, Rail
Standard packaging quantity 1
13.35  yuan 13.35yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8375) Minimum order quantity(1)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/polarity:

N-CH

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Continuous drain current (Ids):

80A

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-220

 

Dimensions/Packaging:

TO-220

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube, Rail

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NP80N04NDG-S18-AY NP80N04NDG-S18-AY Renesas Electronics 类似代替 TO-262
MOS场效应 MOS FIELD EFFECT TRANSISTOR
PDF
NP80N04PLG-E1B-AY NP80N04PLG-E1B-AY NEC 类似代替
MOS场效应 MOS FIELD EFFECT TRANSISTOR
NP80N04PLG-E1B-AY NP80N04PLG-E1B-AY Renesas Electronics 类似代替 TO-263-3
MOS场效应 MOS FIELD EFFECT TRANSISTOR
PDF
NP80N04PUG-E1B-AY NP80N04PUG-E1B-AY NEC 类似代替
MOS场效应 MOS FIELD EFFECT TRANSISTOR

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear