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Model NP80N04PLG-E1B-AY
Description MOSField Effect MOS Field Effect Transistor
Product QR code
Brand: Renesas Electronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.33  yuan 10.33yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1613) Minimum order quantity(1)
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Technical parameters/dissipated power:

1.8W (Ta), 115W (Tc)

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Input capacitance (Ciss):

6900pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

1.8W (Ta), 115W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NP80N04MLG-S18-AY NP80N04MLG-S18-AY Renesas Electronics 类似代替 TO-220
MOS场效应 MOS FIELD EFFECT TRANSISTOR
PDF
NP80N04MLG-S18-AY NP80N04MLG-S18-AY NEC 类似代替
MOS场效应 MOS FIELD EFFECT TRANSISTOR
NP80N04NDG-S18-AY NP80N04NDG-S18-AY Renesas Electronics 类似代替 TO-262
MOS场效应 MOS FIELD EFFECT TRANSISTOR
PDF
NP80N04PUG-E1B-AY NP80N04PUG-E1B-AY NEC 类似代替
MOS场效应 MOS FIELD EFFECT TRANSISTOR

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