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Description Infineon OptiMOS™3 Power MOSFET, 100V and above # # # MOSFET transistor, Infineon Infineon's extensive and comprehensive MOSFET equipment portfolio includes OptiMOS ™ With CoolMOS ™ Series. These products offer top-notch performance in the latest generation of state-of-the-art power MOSFETs
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Brand: Infineon
Packaging PG-TSDSON-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.3  yuan 5.3yuan
10+:
$ 6.3576
100+:
$ 6.0397
500+:
$ 5.8278
1000+:
$ 5.8172
2000+:
$ 5.7748
5000+:
$ 5.7218
7500+:
$ 5.6795
10000+:
$ 5.6583
Quantity
10+
100+
500+
1000+
2000+
Price
$6.3576
$6.0397
$5.8278
$5.8172
$5.7748
Price $ 6.3576 $ 6.0397 $ 5.8278 $ 5.8172 $ 5.7748
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3629) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/polarity: N-Channel

Technical parameters/Input capacitance (Ciss): 320pF @100V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 34 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PG-TSDSON-8

External dimensions/length: 3.4 mm

External dimensions/width: 3.4 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: PG-TSDSON-8

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC22DN20NS3G BSC22DN20NS3G Infineon 完全替代 TDSON
MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
BSZ22DN20NS3GATMA1 BSZ22DN20NS3GATMA1 Infineon 功能相似 TSDSON-8
INFINEON BSZ22DN20NS3GATMA1 晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
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