Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/Input capacitance (Ciss): 320pF @100V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 34 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TSDSON-8
External dimensions/length: 3.4 mm
External dimensions/width: 3.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: PG-TSDSON-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC22DN20NS3G
|
Infineon | 完全替代 | TDSON |
MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
BSZ22DN20NS3GATMA1
|
Infineon | 功能相似 | TSDSON-8 |
INFINEON BSZ22DN20NS3GATMA1 晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
|
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