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Model BSC22DN20NS3G
Description MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
Product QR code
Brand: Infineon
Packaging TDSON
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.38  yuan 5.38yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7661) Minimum order quantity(1)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/Input capacitance (Ciss):

320pF @100V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

34 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

TDSON

 

Dimensions/Length:

5.35 mm

 

Dimensions/Width:

6.35 mm

 

Dimensions/Height:

1.1 mm

 

Dimensions/Packaging:

TDSON

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSZ22DN20NS3G BSZ22DN20NS3G Infineon 完全替代 PG-TSDSON-8
Infineon OptiMOS™3 功率 MOSFET，100V 及以上 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
PDF
BSZ22DN20NS3GATMA1 BSZ22DN20NS3GATMA1 Infineon 功能相似 TSDSON-8
INFINEON BSZ22DN20NS3GATMA1 晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
PDF

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