Technical parameters/rated power: 34 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.194 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 34 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 320pF @100V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 34000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSDSON-8
External dimensions/length: 3.3 mm
External dimensions/width: 3.3 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TSDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Audio, LED Lighting, Class D audio amplifiers, Motor Drive&Control, Isolated DC-DC converters, Audio, Power Management, Power Management, Industrial, LED Lighting, Motor Drive&Control, Synchronous rectification for AC-DC SMPS
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUZ31H3046XKSA1
|
Infineon | 功能相似 | TO-262-3 |
Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review