Technical parameters/polarity: PNP
Technical parameters/dissipated power: 100 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-254
External dimensions/packaging: TO-254
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7371
|
Microsemi | 类似代替 | TO-254 |
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
||
JANTX2N7371
|
Microsemi | 类似代替 | TO-254 |
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
||
JANTXV2N7371
|
Microsemi | 完全替代 | TO-254-3 |
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
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