Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 12A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 100000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-254 |
|
Dimensions/Packaging: | TO-254 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N7371
|
Microsemi | 类似代替 | TO-254 |
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
||
JANTX2N7371
|
Microsemi | 类似代替 | TO-254 |
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
||
JANTXV2N7371
|
Microsemi | 功能相似 | TO-254-3 |
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review