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Model JANTXV2N7371
Description PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Product QR code
Brand: Microsemi
Packaging TO-254-3
Delivery time
Packaging method Tray
Standard packaging quantity 1
9793.83  yuan 9793.83yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8790) Minimum order quantity(1)
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Technical parameters/polarity:

PNP

 

Technical parameters/dissipated power:

100 W

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

12A

 

Technical parameters/minimum current amplification factor (hFE):

1000 @6A, 3V

 

Technical parameters/rated power (Max):

100 W

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

100000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-254-3

 

Dimensions/Packaging:

TO-254-3

 

Physical parameters/operating temperature:

-65℃ ~ 200℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

Customs information/ECCN code:

EAR99

 

Customs Information/Hong Kong Import and Export License:

NLR

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N7371 2N7371 Microsemi 功能相似 TO-254
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
PDF
JAN2N7371 JAN2N7371 Microsemi 完全替代 TO-254
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
PDF
JANTX2N7371 JANTX2N7371 Microsemi 功能相似 TO-254
PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
PDF

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