Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/Continuous drain current (Ids): 1.6A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD2N100TM
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FQD2N100TM 功率场效应管, MOSFET, N沟道, 1.6 A, 1 kV, 7.1 ohm, 10 V, 5 V
|
||
FQD2N100TM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FQD2N100TM 功率场效应管, MOSFET, N沟道, 1.6 A, 1 kV, 7.1 ohm, 10 V, 5 V
|
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