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Model FQD2N100TM

Description QFET® N 通道 MOSFET，高达 5.9A，Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。它们通过降低导通电阻 (RDS(on)) 来减少通态损耗，并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(6192) Minimum order quantity(1)

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	7.1 Ω
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	5 V
Technical parameters/drain source voltage (Vds):	1000 V
Technical parameters/rise time:	30 ns
Technical parameters/Input capacitance (Ciss):	400pF @25V(Vds)
Technical parameters/rated power (Max):	2.5 W
Technical parameters/descent time:	35 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.5 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.6 mm
Dimensions/Width:	6.1 mm
Dimensions/Height:	2.3 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power management, lighting, industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

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STD3NK100Z	ST Microelectronics	功能相似	TO-252-3	N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics