Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/DC current gain (hFE): 500
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/height: 8.89 mm
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU941
|
ST Microelectronics | 功能相似 | TO-3 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
||
BU941
|
UTC | 功能相似 | TO-220 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
||
BU941
|
New Jersey Semiconductor | 功能相似 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
|||
|
MJ10012
|
Wings | 类似代替 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
|||
MJ10012
|
NTE Electronics | 类似代替 | TO-3 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
||
|
MJ10012
|
ON Semiconductor | 类似代替 | TO-3 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
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