Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
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Other/Product Features: | NPNSilicon transistor |
|
Other/Base Voltage: | 400V |
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Other/collector current: | 15A |
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Other/DC current gain (min): | 300 |
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Other/collector dissipated power: | 65~155W |
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Other/Storage Temperature: | -65℃~150℃ |
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Other/Packaging: | TO-3P TO-220 TO-263 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU931
|
ST Microelectronics | 类似代替 | TO-3 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
||
MJ10001
|
NTE Electronics | 功能相似 | TO-3 |
NTE ELECTRONICS MJ10001 晶体管, NPN, 400V
|
||
MJ10001
|
Wings | 功能相似 |
NTE ELECTRONICS MJ10001 晶体管, NPN, 400V
|
|||
|
MJ10012
|
Wings | 功能相似 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
|||
MJ10012
|
NTE Electronics | 功能相似 | TO-3 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
||
|
MJ10012
|
ON Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
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