Technical parameters/dissipated power: 175000 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 175000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU931
|
ST Microelectronics | 功能相似 | TO-3 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
||
BU941
|
ST Microelectronics | 功能相似 | TO-3 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
||
BU941
|
UTC | 功能相似 | TO-220 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
||
BU941
|
New Jersey Semiconductor | 功能相似 |
高压点火线圈驱动NPN达林顿功率晶体管 High voltage ignition coil driver NPN power Darlington transistors
|
|||
|
MJ10012
|
Wings | 功能相似 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
|||
MJ10012
|
NTE Electronics | 功能相似 | TO-3 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
||
|
MJ10012
|
ON Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS MJ10012 单晶体管 双极, NPN, 500 V, 175 W, 10 A, 300 hFE
|
||
NTE97
|
NTE Electronics | 功能相似 | TO-3 |
TO-3 NPN 400V 10A
|
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