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Description Trans MOSFET N-CH Si 200V 18A 3Pin(2+Tab) TO-263AB T/R
Product QR code
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
15.74  yuan 15.74yuan
5+:
$ 18.4170
50+:
$ 17.6299
200+:
$ 17.1892
500+:
$ 17.0790
1000+:
$ 16.9688
2500+:
$ 16.8429
5000+:
$ 16.7642
7500+:
$ 16.6855
Quantity
5+
50+
200+
500+
1000+
Price
$18.4170
$17.6299
$17.1892
$17.0790
$16.9688
Price $ 18.4170 $ 17.6299 $ 17.1892 $ 17.0790 $ 16.9688
Start batch production 5+ 50+ 200+ 500+ 1000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6644) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 140 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 125 W

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/leakage source breakdown voltage: 200 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 18.0 A

Technical parameters/rise time: 50 ns

Technical parameters/descent time: 35 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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