Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 140 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/rise time: 50 ns
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN015-60PS
|
NXP | 功能相似 | TO-220 |
NXP PSMN015-60PS 晶体管, MOSFET, N沟道, 50 A, 60 V, 12.6 mohm, 10 V, 3 V
|
||
PSMN016-100PS
|
Nexperia | 功能相似 | TO-220 |
NXP PSMN016-100PS 晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
|
||
PSMN2R7-30PL
|
NXP | 功能相似 | TO-220 |
NXP PSMN2R7-30PL 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
|
||
PSMN2R7-30PL
|
Nexperia | 功能相似 | TO-220 |
NXP PSMN2R7-30PL 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
|
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