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Model PSMN2R7-30PL

Description NXP PSMN2R7-30PL Transistor, MOSFET, N-channel, 100 A, 30 V, 2.3 Mohm, 10 V, 1.7 V

Brand: NXP

Packaging TO-220

Delivery time

Packaging method

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	2.3 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	170 W
Technical parameters/threshold voltage:	1.7 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	100A
Technical parameters/Input capacitance (Ciss):	3954pF @12V(Vds)
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	170 W
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220
Dimensions/Length:	10.3 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	16 mm
Dimensions/Packaging:	TO-220
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Unknown
Other/Manufacturing Applications:	Consumer Electronics, Power Management, Motor Drive & Control, Communications & Networking, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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